Which has a shorter recovery time, Schottky or fast recovery diode?

Which has a shorter recovery time, Schottky or fast recovery diode?

Schottky barrier diode is a barrier diode formed by the end of metal and semiconductor, which conducts electricity through majority carriers. Its reverse saturation current is much larger than that of fast recovery diodes that conduct electricity through minority carriers. Moreover, the storage effect of minority carriers is very small, and the reverse recovery time is much shorter.

The size, process, and withstand voltage level of diodes can all affect the conduction voltage drop and reverse recovery time. Large diodes usually have higher VF and tRR, which can cause significant losses. Switching diodes are generally divided into "high speed", "very high speed", and "ultra high speed" diodes based on speed, and the reverse recovery time decreases with increasing speed. The tRR of fast recovery diodes is several hundred nanoseconds, while the tRR of ultra fast recovery diodes is several tens of nanoseconds.

In low-power applications, a substitute for fast recovery diodes is Schottky diodes, which have almost negligible recovery time and a reverse recovery voltage VF that is only half of that of fast recovery diodes (0.4V to 1V). However, the rated voltage and current of Schottky diodes are much lower than those of fast recovery diodes, making them unsuitable for high voltage or high-power applications. In addition, Schottky diodes have higher reverse leakage current compared to silicon diodes, but these factors do not limit their application in many power sources.

The recovery time of the fast recovery diode is 250-500ns

The recovery time of the ultrafast recovery diode is 75-250ns

The recovery time of Schottky diode is about 10ns

And their forward conduction voltage is also different.

Schottky diode is a Schottky barrier diode based on the potential barrier formed by the contact between metal and semiconductor, abbreviated as Schottky diode. Schottky diodes belong to low-power, ultra high speed semiconductor devices, with reverse recovery time as small as a few nanoseconds (2-10ns nanoseconds), forward voltage drop of only about 0.4V (0.4-1.0V), and rectified current reaching several thousand amperes. Moreover, the reverse leakage current is large and the withstand voltage is low, generally below 150V, which is mostly used in low-voltage situations.