Improved electrode structure and innovative organic field-effect transistor have been developed

With the strong support of the National Natural Science Foundation of China, the Ministry of Science and Technology, and the Chinese Academy of Sciences, researchers from the Key Laboratory of the Institute of Mechanical and Solid State Sciences of the Chinese Academy of Chemistry have cooperated with scientists and technicians from the Institute of Microelectronics of the Chinese Academy of Sciences to make new progress in the research of high-performance, low-cost airport effect transistors. Relevant research achievements have applied for Chinese invention patents and were published on J.Am. Chem. Soc. (2006, Vol.128, No. 51, p.16418-16419). Researchers started with low-cost copper and silver lower electrode structures, combined with surface modification of silicon dioxide substrates, and generated organic charge transfer complexes on the electrodes through a simple one-step solution method, thereby improving the surface work function of copper and silver electrodes, improving the contact between electrodes and organic semiconductors, reducing contact resistance, and improving carrier injection, thus achieving high performance comparable to gold electrode structure devices. This method has universality and can be applied to various organic semiconductor materials. This research progress can greatly reduce the preparation cost of organic field-effect transistors, laying a good foundation for the practical application of organic field-effect transistors. Organic field-effect transistors are divided into upper electrode structure and lower electrode structure devices according to their electrode structure. In the upper electrode structure device, there is good contact between the source drain electrode and the organic semiconductor material, which makes it have high performance. The lower electrode structure can be fabricated using photolithography technology, which facilitates large-scale industrial production and reduces product costs. However, the lower electrode structure device has poor field effect performance due to the larger electrode semiconductor contact resistance. In addition, the widely used source drain electrode material is the high cost gold electrode. From a practical application perspective, it is best to use low-cost metal electrodes such as copper and silver. However, due to their low work function, the performance of field-effect devices prepared using copper or silver as source drain electrodes is not ideal. Therefore, preparing low-cost and high-performance devices with lower electrode structures is an important goal in the research of organic field-effect transistors. In recent years, organic field-effect transistors have attracted widespread attention and made significant progress in academia and industry due to their potential applications in active matrix displays, radio frequency tags, and other fields. At present, the performance of high-performance organic field-effect transistors can be comparable to widely used amorphous silicon transistors. Compared to inorganic field-effect transistor devices, organic field-effect transistors have unique advantages of low cost and flexibility.