What is a silicon carbide triode? The basic structure, advantages and disadvantages, working principle, application, working state, installation steps, testing methods, and development history of silicon carbide triodes

Silicon carbide transistor (SiC transistor) is an STM32F401RCT6 transistor that uses silicon carbide (SiC) as the semiconductor material. It has excellent high temperature, high voltage, and high frequency characteristics, which can replace traditional transistors made of silicon materials and perform better in special environments such as high temperature, high voltage, and high frequency.

1、 Basic structure:

The basic structure of a silicon carbide transistor includes a P-type doped region, an N-type doped region, and an N-type doped region. The structure between the P-type doped region and the N-type doped region forms a PN junction, which plays a rectifying role. The structure between the P-type doped region and the N-type doped region forms a diode. The structure between N-type doped regions forms an NPN transistor. The entire structure is encapsulated in a metal casing to protect the device from external environmental influences.

2、 Advantages and disadvantages:

Compared to traditional transistors made of silicon materials, silicon carbide transistors have the following advantages:

1. High temperature characteristics: Silicon carbide has high thermal conductivity and thermal stability, and can work normally in high temperature environments, making it suitable for high-temperature applications.

2. High voltage characteristics: Silicon carbide has a high breakdown electric field strength and can withstand high voltages, making it suitable for high-voltage applications.

3. High frequency characteristics: Silicon carbide has high electron migration speed and small capacitance effect, which can achieve high-speed switching and high-frequency operation.

4. Low conduction loss: Silicon carbide has low conduction loss, which can improve energy efficiency and save energy.

However, silicon carbide transistors also have some drawbacks:

1. High manufacturing cost: The manufacturing and processing technology of silicon carbide materials is still relatively complex and expensive compared to mature silicon materials.

2. Difficult manufacturing process: Due to the special properties of silicon carbide materials, the manufacturing process of silicon carbide transistors is relatively difficult and the production efficiency is low.

3、 Working principle:

The working principle of a silicon carbide transistor is similar to that of a traditional transistor made of silicon material. When a forward voltage is applied to the PN junction, the holes in the P region and the free electrons in the N region will diffuse to the isolation region. When a forward voltage is applied to the base, free electrons in the N region are attracted to the base, forming electron hole pairs, while holes in the N region diffuse towards the base. When electron hole pairs enter the base, due to the N-type doping type of the base, they further diffuse towards the collector. This forms a current, thereby achieving the amplification and switching functions of the transistor.

4、 Application:

Silicon carbide triodes can be widely used in the field of power electronics, including frequency converters, UPS power supplies, electric vehicles, solar inverters, etc. Its high temperature, high frequency, and high voltage resistance characteristics make it have broad application prospects in efficient energy conversion and power transmission.

5、 Working status:

The working state of silicon carbide transistor mainly includes conduction state and turn off state. In the conducting state, a narrow potential barrier is formed at the P-N junction of the transistor, allowing current to pass through. In the off state, the potential barrier at the P-N junction increases, preventing current from passing through.

6、 Installation steps:

When installing silicon carbide transistors, the following steps should be noted:

1. Preparation work: Firstly, confirm whether the model and specifications of the silicon carbide transistor used are correct, and check for any damage or missing items. At the same time, check whether the installation accessories such as radiator, insulation gasket, and screws are complete.

2. Preparation of radiator: Place the radiator in the installation position and fix it with screws to ensure that the surface of the radiator is flat, clean, and can dissipate heat well.

3. Installation of insulation gasket: Place the insulation gasket on the radiator, ensuring that it is tightly attached to the radiator and will not move or slide.

4. transistor installation: Place the silicon carbide transistor on the insulating gasket, ensuring that the pins are aligned with the solder pads on the heat sink. Meanwhile, it is important to avoid applying excessive pressure to the pins of the transistor to prevent damage to the packaging.

5. Pin soldering: Use solder to solder the pins of the silicon carbide transistor to the solder pads on the heat sink, ensuring good soldering quality, bright and firm solder joints.

6. Insulation treatment: Place the insulation sheet above the silicon carbide transistor to protect it from external environmental influences. Ensure that the insulation sheet covers the entire transistor and is in close contact with the heat sink.

7. Fixed installation: Use screws to secure the insulation sheet and silicon carbide transistor to the heat sink, ensuring a firm and reliable installation.

8. Inspection and testing: After installation, conduct a visual inspection to ensure correct installation and no damage. Then, test the connection circuit and heat sink to ensure the normal operation of the silicon carbide transistor.

7、 Testing method:

The testing methods for silicon carbide transistors mainly include static parameter testing and dynamic parameter testing. Static parameter testing includes testing the on voltage, off voltage, and leakage current of the device; Dynamic parameter testing includes testing the switching speed, switching loss, and reverse recovery time of the device.

8、 Development history:

Silicon carbide transistor (SiC transistor) is a type of transistor based on silicon carbide semiconductor material. It has high working temperature capability, high voltage bearing capacity, and high frequency characteristics, making it widely applicable in high-temperature and high-frequency applications.

The development history of SiC transistors can be traced back to the 1950s. The earliest experiment was reported in 1962 by J. Balder and R. Meijer from Philips, who successfully prepared the earliest silicon carbide transistor. However, at that time, it was very difficult to prepare high-quality SiC materials, which limited the development of SiC transistors.

In the 1980s, with the advancement of material growth technology, the quality of SiC materials was significantly improved. Subsequently, researchers began to explore the performance and applications of SiC transistors. In 1994, Toshiba Corporation of Japan first commercialized SiC transistors, marking the beginning of the commercialization process of SiC transistors.

In recent years, with the further development of silicon carbide material preparation technology, the performance of SiC transistors has been continuously improved. It has been widely used in high-temperature, high-frequency, and high-voltage fields, such as energy conversion, power electronics, automotive electronics, and aerospace. The high temperature and high frequency characteristics of SiC transistors make them have great potential in high-performance power conversion and high-frequency circuits