Analysis of MOSFET Breakdown Causes

1. Overvoltage Stress: Exceeding the rated voltage (e.g., Vds or Vgs) damages the insulating oxide layer or causes avalanche breakdown, particularly in switching applications with inductive loads.

2. Overcurrent Conditions: Sudden high currents (Ids) generate excessive heat, leading to thermal runaway and physical burnout of the die or bonding wires.

3. ESD (Electrostatic Discharge) Events: Uncontrolled electrostatic charges during handling or assembly can punch through the thin gate oxide, causing permanent leakage or short circuits.

4. Thermal Mismanagement: Inadequate heat dissipation under continuous high-power operation elevates junction temperature, degrading material properties and triggering breakdown.

5. Gate Drive Issues: Insufficient or oscillating gate voltage (Vgs) may keep the MOSFET in the linear region, increasing power dissipation and risking thermal failure.

YFW's MOSFET diode (including high voltage, super junction, and medium low voltage types) adopt robust design to reduce these risks. Strict testing ensures cross application reliability, minimizes the likelihood of failures, and improves system stability.