Classification of Field-Effect Transistors (FETs): A Comprehensive Overview

N-Channel JFET: Utilizes an N-type semiconductor channel with a P-type gate, allowing current flow via electrons. Ideal for low-noise amplifiers and high-input-impedance circuits .

P-Channel JFET: Features a P-type channel and an N-type gate, conducting through holes. Suitable for complementary designs and specific voltage biasing needs.

Enhancement-Mode MOSFET: Requires a threshold voltage to form a conductive channel. Dominates digital logic and power switching due to its high efficiency and scalability .

Depletion-Mode MOSFET: Has a pre-formed channel, enabling operation with zero gate voltage. Used in analog circuits and voltage regulators.

VMOSFET: A vertical MOSFET with a V-shaped groove for higher power handling, common in motor drivers and power supplies .

IGBT (Insulated Gate Bipolar Transistor): Combines MOSFET input with BJT output, excelling in high-voltage applications like inverters and industrial controls .

HEMT (High-Electron-Mobility Transistor): Designed for high-frequency RF applications, leveraging heterostructure materials for superior speed .

2D Material FETs: Graphene and MoS₂-based devices offer ultra-thin, flexible designs for next-gen electronics .