The function of 1N4007 diode

The function of 1N4007 diode

1N4007 is a general silicon rectifier diode, which is packaged in the form of DO-41 and SMA. It is widely used in various AC-to-DC rectifier circuits, and can also be used in bridge rectifier circuits. Using diode unilateral conductivity, alternating current with alternating direction can be converted into pulsed direct current with single direction.

Firstly, the basic parameters of 1N4007 diode are understood: the maximum average forward rectified current of 1N4007 rectifier diode is 1.0A；; Maximum reverse withstand voltage: 1000 V; Maximum forward peak surge current: 30A；; Forward pressure drop: 1.1V

Maximum reverse leakage current: 5.0uA

1N4007 diode is used as rectifier diode: rectifier diodes are mainly various low-frequency half-wave rectifier circuits, which need to be connected as a rectifier bridge if full-wave rectifier is needed.

Usually it contains a PN junction with anode and cathode ends. The carriers in the P region are holes, and the carriers in the N region are electrons. When a voltage is applied to make the P region positive with respect to the N region, a large current can flow and the voltage drop is low (typically 0.7V), which is called a forward conduction state. If the opposite voltage is applied, the reverse current is very small (reverse leakage current), which is called reverse blocking state.

Silicon rectifier diode has high breakdown voltage, low reverse leakage current and good high temperature performance. Usually, high-voltage and high-power rectifier diodes are made of high-purity monocrystalline silicon (it is easy to reverse breakdown when doped too much). This device has a large cross-sectional area and can pass a large current (up to thousands of amps), but its working frequency is not high, generally below tens of KHz.