The structural principle of Schottky rectifier diode

What is the structure of Schottky diodes? What is the difference in structure between Schottky diode and rectifier diode?

The structural principle of Schottky rectifier diode is significantly different from that of PN rectifier diode. PN rectifier diode is usually referred to as junction rectifier diode, while metal semiconductor rectifier diode is referred to as Schottky rectifier diode. In recent years, aluminum silicon Schottky diodes manufactured using silicon planar technology have also been introduced, which not only saves precious metals and significantly reduces costs, but also improves parameter consistency.

The Schottky rectifier diode only uses one type of carrier (electron) to transport charges, and there is no accumulation of excess minority carriers outside the barrier. Therefore, there is no charge storage problem (Qrr → 0), which significantly improves the switching characteristics. Its reverse recovery time can be shortened to within 10ns. But its reverse withstand voltage value is relatively low, generally not exceeding 100V when it goes out. Therefore, it is suitable for working under low voltage and high current conditions. By utilizing its low voltage drop characteristic, the efficiency of low voltage and high current rectification (or freewheeling) circuits can be improved.

The result of Schottky diode sets it apart from other diodes and makes it play a special role in applications.