The difference between Schottky diode and ordinary rectifier diode

Schottky diodes use metal semiconductor interfaces as Schottky barriers to produce rectification effects, which is different from the P-N interface generated by semiconductor semiconductor interfaces in general diodes. The characteristics of Schottky barrier make the conduction voltage drop of Schottky diode lower and can improve the switching speed.

The conduction voltage of Schottky diodes is very low. A typical diode produces a voltage drop of about 0.7-1.7 volts when current flows through it, but the voltage drop of a Schottky diode is only 0.15-0.45 volts, which can improve the efficiency of the system.

The biggest difference between Schottky diodes and general rectifier diodes is the reverse recovery time, which is the time required for the diode to switch from a conducting state with forward current to a non conducting state. The reverse recovery time of a typical rectifier diode is about several hundred nanoseconds, while for high-speed diodes it will be lower than one hundred nanoseconds. Schottky diodes do not have reverse recovery time, so the switching time of small signal Schottky diodes is about tens of pS, and the switching time of special large capacity Schottky diodes is only tens of pS.

Due to the fact that rectifier diodes generally generate EMI noise during reverse recovery time due to reverse current. Schottky diodes can switch immediately without any issues with reverse recovery time or reverse current.