Comparison between TVS and MOV

In the field of electronic applications, it is essential to protect against electrostatic discharge, transient voltage, EFT, and surge voltage immunity to ensure the safety and reliability of electronic circuits. In the field of protection, there are two types of protective components: TVS semiconductor diodes with avalanche characteristics and multilayer varistors. In order to use them reasonably, it is necessary to compare TVS and MOV for correct selection and optimize product design.

 Multilayer varistor is a special component that compresses zinc oxide material into a rectangular shape, forming a multi grain structure and dividing it into multiple layers to form a more uniform and consistent control region. It achieves the ability to absorb surge current through changes in conduction resistance.

 Avalanche breakdown diode TVS and multilayer zinc oxide varistor both rely on changing their own resistive characteristics to control electrostatic discharge, transient voltage, and surge voltage. The main difference is the resistance after conduction. TVS has a highly sensitive N/P junction for control, and its conduction resistance is very low, while MOV's conduction resistance is much higher than TVS, resulting in differences in clamping voltage and clamping ratio.