Date：2024-11-07 Categories：Product knowledge Hits：206 From：Guangdong Youfeng Microelectronics Co., Ltd
The N-channel MOSFET has an N-channel region located between the source and drain terminals. It is a four terminal device with terminals for gate, drain, source, and body. In this type of field-effect transistor, the drain and source are heavily doped n+regions, and the substrate or body is P-type.
Due to negatively charged electrons, current flows in this type of MOSFET. When we apply a positive voltage with repulsive force on the gate terminal, the holes existing below the oxide layer will be pushed down into the substrate. The depletion region is composed of negative charges associated with the receptor atoms.
When electrons arrive, a channel is formed. Positive voltage also attracts electrons from the n+source and drain regions into the channel. Now, if a voltage is applied between the drain and source, current will flow freely between them, while the gate voltage controls the electrons in the channel.
If we apply a negative voltage, a hole channel will form below the oxide layer instead of a positive voltage.
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