Field effect transistor concept

The new generation of amplification components developed based on the principle of the transistor has three polarities: gate, drain, and source. Its characteristic is the extremely high internal resistance of the gate, which can reach several hundred megaohms using silicon dioxide material. It belongs to voltage controlled devices.

Field Effect Transistor (FET), abbreviated as Field Effect Transistor. Conducted by majority carriers, also known as unipolar transistors; It belongs to voltage controlled semiconductor devices.